| PART |
Description |
Maker |
| K1S321611C K1S321611C-FI70 K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32005BT KM23V32005BET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K1B3216BDD |
2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
|
Samsung Semiconductor
|
| K1S1616B1A-I K1S1616B1A K1S1616B1A-BI70 K1S1616B1A |
1Mx16 bit Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K1S64161CCNBSP K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K1S16161CA-I K1S16161CA DSK1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT49BV321T-85CI AT49BV321T-85TI AT49BV320T-85TI AT |
EEPROM|FLASH|2MX16|CMOS|TSSOP|48PIN|PLASTIC
Metal Film Resistor - RN 1/4 T1 18 5% A
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|2MX16|CMOS|BGA|46PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16 |的CMOS | BGA封装| 46PIN |塑料
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Microchip Technology, Inc.
Anpec Electronics, Corp.
|
| EMC326SP16AKS-45L EMC326SP16AKS-45LF EMC326SP16AKS |
2Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
|
| STK22C48-P45 STK22C48-P45I STK22C48-N20 STK22C48-N |
DIODE TVS 170V 400W UNI 5% SMA
DIODE TVS 17V 400W BIDIR 5% SMA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA RoHS Compliant: Yes
DIODE TVS 100V 400W UNI 5% SMA
DIODE TVS 10V 400W UNI 5% SMA
DIODE TVS 30V 400W BIDIR 5% SMA
NVRAM (EEPROM Based)
DIODE TVS 120V 400W BIDIR 5% SMA
DIODE TVS 300V 400W UNI 5% SMA
DIODE TVS 36V 400W UNI 5% SMA
DIODE TVS 130V 400W UNI 5% SMA
DIODE TVS 180V 400W UNI 5% SMA
DIODE TVS 18V 400W BIDIR 5% SMA
DIODE TVS 200V 400W UNI 5% SMA
DIODE TVS 150V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 20V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 400V 400W UNI 5% SMA NVRAM中（EEPROM的基础
|
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| BDT63C BDT63A-SM BDT63C-SM |
DIODE TVS 6.5V 1500W UNI 5% SMC
TRANSISTOR DARLINGTON
|
HI
|
